High temperature creep of 20 vol.% SiC-HfB2 UHTCs up to 2000 °C
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Published version
Author(s)
Zapata-Solvas, E
Gomez-Garcia, D
Dominguez-Rodriguez, A
Lee, WE
Type
Journal Article
Abstract
High temperature compressive creep of SiC-HfB2 UHTCs up to 2000 °C has been studied. Microstructural analysis after deformation reveals formation of new phases in the Hf-B-Si and Hf-B-Si-C systems, which are responsible for the poor creep resistance. RE oxide additions have a negative effect reducing the creep resistance of SiC-HfB2 UHTCs. A simplistic analysis for the required creep resistance is described, indicating that only SiC-HfB2 UHTCs could withstand re-entry conditions for 5 min in a single use. However, RE oxide addition to SiC-HfB2 UHTCs does not provide the required creep resistance for them to be candidate materials for hypersonic applications.
Date Issued
2017-08-24
Date Acceptance
2017-08-19
Citation
Journal of the European Ceramic Society, 2017, 38 (1), pp.47-56
ISSN
0955-2219
Publisher
Elsevier
Start Page
47
End Page
56
Journal / Book Title
Journal of the European Ceramic Society
Volume
38
Issue
1
Copyright Statement
© 2017 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/BY/4.0/).
License URL
Sponsor
Engineering & Physical Science Research Council (E
Grant Number
J13614 (EP/K008749/1)
Subjects
0912 Materials Engineering
Materials
Publication Status
Published