Short‐wavelength infrared imaging with organic photodetectors based on non‐fullerene acceptors with detection above 1200 nm
Author(s)
Type
Journal Article
Abstract
Organic photodetectors (OPDs) have emerged as promising candidates for next-generation light-detecting technologies. Compared to traditional inorganic photodetectors (e.g. silicon and indium gallium arsenide), OPDs offer advantages including lower fabrication cost, intrinsic mechanical flexibility, and tunable detection range. However, their performance still lags behind that of traditional detectors, particularly in the near-infrared region. In this work, two low band gap non-fullerene acceptors, BZIC-2F and BZIC-2Cl are synthesized, both exhibiting absorption onsets beyond 1200 nm. OPDs based on BZIC-2F deliver superior performance when blended with the low-cost donor P3HT, achieving spectral responsivity values of 0.49 A W−1 (1010 nm under −2 V) and a specific detectivity of 1.30 × 1012 Jones, outperforming benchmark commercial silicon detectors in the shortwave infrared (SWIR) range, while maintaining stable photoresponse over 3 million on/off illumination cycles. Furthermore, a prototype blade-coated active-matrix imager is fabricated in air on an amorphous silicon backplane. The imager exhibits a broadband light detection range spanning from visible to SWIR, enabling practical applications such as faint infrared light imaging, semiconductor wafer inspection, LiDAR light detection, and banknote verification. Combined with detailed materials cost analysis, this work represents the first demonstration of an integrated active-matrix imager employing a fully organic semiconductor photoactive layer capable of high-speed SWIR imaging, highlighting its promise for a scalable and cost-effective next-generation SWIR photodetector.
Date Issued
2026-06-02
Date Acceptance
2026-04-19
Citation
Advanced Materials, 2026, 38 (31)
ISSN
0935-9648
Publisher
Wiley
Journal / Book Title
Advanced Materials
Volume
38
Issue
31
Copyright Statement
© 2026 The Author(s). Advanced Materials published by Wiley-VCH GmbH This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
License URL
Identifier
https://www.ncbi.nlm.nih.gov/pubmed/42057636
Subjects
SWIR organic photodetectors
imagers
large area electronics
low band gap
non‐fullerene acceptors
Publication Status
Published
Coverage Spatial
Germany
Article Number
e22600
Date Publish Online
2026-04-30