High-performance perovskite light-emitting diodes (PeLEDs) require a high quality perovskite emitter and appropriate charge transport layers to facilitate charge injection and transport within the device. Solution-processed n-type metal oxides represent a judicious choice for the electron transport layer (ETL); however, they don't always present suitable surface properties and energetics in order to be compatible with the perovskite emitter. Moreover, the emitter itself exhibits poor nanomorphology and defect traps that compromise the device performance. Here we modulate the surface properties and interface energetics of the tin oxide (SnO2) ETL with the perovskite emitter by using an amino functionalized difluoro{2-[1-(3,5-dimethyl-2H-pyrrol-2-ylidene-N)ethyl]-3,5-dimethyl-1H-pyrrolato-N}boron (BDP) compound and passivate the defects present in the perovskite with carbon-polymer core-shell quantum dots (PCDs) inserted into the perovskite precursor. Both these approaches synergistically improve the perovskite layer nanomorphology and enhance the radiative recombination. These properties resulted in the fabrication of near infrared (NIR) PeLEDs based on formamidinium lead iodide (FAPbI3) with a high radiance of 92 W sr-1 m-2, an external quantum efficiency (EQE) of 14% and reduced efficiency roll-off.