Monolayer TiS2 is the lightest member of the transition metal dichalcogenides family with promising application in energy storage and conversion systems. Use of TiS2 has been limited by the lack of rapid characterisation of layer number via Raman spectroscopy and its easy oxidation in wet environment. Here, we demonstrate layer number dependent Raman modes for TiS2. 1T-TiS2 presents two characteristics Raman active modes, A1g (out-of-plane) and Eg (in-plane). We identified a characteristic peak frequency shift of the Eg mode with the layer number and an unexplored Raman mode at 372 cm-1 whose intensity changes relative to the A1g mode with the thickness of TiS2 sheets. These two characteristic features of the Raman spectra allow the determination of layer numbers between 1 and 5 in exfoliated TiS2. Further, we develop a method to produce oxidation-resistant inks of micron sized mono- and few-layered TiS2 nanosheets at concentrations up to 1 mg/mL .These TiS2 inks can be deposited to form thin films with controllable thickness and nanosheet density over cm2 areas. This opens up pathways for a wider utilization of exofliated TiS2 towards a range of applications.