This Letter aims to promote basic research into memristors, which will help provide theorists with much-needed reliable benchmarks and will also aid the technology progress. It addresses an information gap presently in the literature on simple microfabrication techniques for the realisation of such devices. Consequently, a fabrication method is reported for implementing the full active-material stack, requiring a single lithography and evaporation step. A cost-effective technique that can reliably shrink device lateral dimensions towards the nanoscale is also demonstrated. Experimental results confirm the suitability of the proposed methods for fabricating memristors of varying dimensions that exhibit consistent electrical characteristics.