The thesis describes the research carried out into fabrication of multilayer microwave capacitance structure with ferroelectric films in paraelectric state; and confirmation of the possibility to develop on their base an electronically switchable bulk acoustic wave (BAW) resonator. Different eigenmodes of acoustic resonances can be excited and switched electronically through the application to ferroelectric layers of the resonator unidirectional or oppositely directed dc biased electric fields.The resonator was fabricated out of a SrRuO3/SrTiO3/SrRuO3/YSZ multilayer structure deposited on top of Si substrate. Pulsed Laser Deposition, Magnetron Sputtering, Photolithography, Argon Ion Beam Milling, and Reactive Ion Etching were the fabrication methods used to make this resonator.This novel device is a demonstrator that will contribute to the telecommunications industry’s demand for flexibility in both microwave frequency switching and tuning. The Si MEMS concept of this resonator allows easy circuit board integration into many electronics products.