Increase in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub 100 nm MOSFETs: A 3-D Density Gradient Simulation Study

File(s)

00915703_IEEE_2001.pdf (167.62 KB)

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Author(s)

Asenov, A

Slavcheva, G

Brown, AR

Davies, JH

Saini, S

Type

Journal Article

Version

Published version

Date Issued

2001

Citation

IEEE Trans. Electron Dev., 2001, 48 (4), pp.722-729

URI

http://hdl.handle.net/10044/1/5780

URL

http://dx.doi.org/10.1109/16.915703

ISSN

0018-9383

Start Page

722

End Page

729

Journal / Book Title

IEEE Trans. Electron Dev.

Volume

48

Issue

4

Copyright Statement

© 2001 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

License URL

http://www.rioxx.net/licenses/all-rights-reserved

Source Volume Number

48

Publication Status

Published