Dear Spiral User, we appreciate your patience during this upgrade which is to benefit our userbase, improve their experience in Spiral, introduce improvements, fixes and maintaining our versioning for future updates. Please note if you encounter any issues in Spiral, please raise a ticket to Research Applications team providing as much detail as possible in order to help us resolve your query. Again, we thank you for your patience and support during the upgrade. Kind Regards, Spiral Upgrade Team.
 
Increase in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub 100 nm MOSFETs: A 3-D Density Gradient Simulation Study
File(s)
00915703_IEEE_2001.pdf (167.62 KB)
Published version
Author(s)
Asenov, A
Slavcheva, G
Brown, AR
Davies, JH
Saini, S
Type
Journal Article
Version
Published version
Date Issued
2001
Citation
IEEE Trans. Electron Dev., 2001, 48 (4), pp.722-729
URI
URL
ISSN
0018-9383
Start Page
722
End Page
729
Journal / Book Title
IEEE Trans. Electron Dev.
Volume
48
Issue
4
Copyright Statement
© 2001 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
License URL
Source Volume Number
48
Publication Status
Published