Flexible IGZO TFTs and their suitability for space applications
File(s)
Published version
OA Location
Author(s)
Type
Journal Article
Abstract
In this paper, low earth orbit radiation (LEO), temperature, and magnetic field conditions are mimicked to investigate the suitability of flexible InGaZnO transistors for lightweight space wearables. More specifically, the impacts of high energetic electron irradiation with fluences up to 10 12 e - /cm 2 , low operating temperatures down to 78 K and magnetic fields up to 11 mT are investigated. This simulates 278 h in LEO. The threshold voltage and mobility of transistors that were exposed to e - irradiation are found to shift by +(0.09 ± 0.05) V and -(0.6 ± 0.5) cm 2 V -1 s -1 . Subsequent low temperature exposure resulted in additional shifts of +0.38 V and -5.95 cm 2 V -1 s -1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. Conversely, the performance of the devices was observed not to be significantly affected by the magnetic fields. Finally, a Cascode amplifier presenting a voltage gain of 10.3 dB and a cutoff frequency of 1.2 kHz is demonstrated after the sample had been irradiated, cooled down, and exposed to the magnetic fields. If these notions are considered during the systems design, these devices can be used to unobtrusively integrate sensor systems into space suits.
Date Issued
2019-12-06
Date Acceptance
2019-07-21
Citation
IEEE Journal of the Electron Devices Society, 2019, 7 (1), pp.1182-1190
ISSN
2168-6734
Publisher
Institute of Electrical and Electronics Engineers
Start Page
1182
End Page
1190
Journal / Book Title
IEEE Journal of the Electron Devices Society
Volume
7
Issue
1
Copyright Statement
© 2019 The Author(s). This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/
License URL
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http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000506852100005&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
Subjects
Science & Technology
Technology
Engineering, Electrical & Electronic
Engineering
Flexible electronics
space applications
amorphous oxides
wearables
thin film transistors
THIN-FILM TRANSISTORS
THERMAL-EXPANSION
ENVIRONMENT
Publication Status
Published
Date Publish Online
2019-07-29